| PART |
Description |
Maker |
| GLT41016 |
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
G-Link Technology
|
| GLT41116 GLT4116-30J4 GLT4116-30TC GLT4116-35J4 GL |
64k x 16 CMOS Dynamic RAM with Fast Page Mode 64k的16的CMOS动态随机存储器的快速页面模
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| TC55V1664BJ-12 TC55V1664BFT-10 |
64K Word x 16 Bit CMOS Static RAM(64Kx 16 CMOS 静RAM)
64K Word x 16 Bit CMOS Static RAM(64K瀛?x 16 浣?CMOS ???RAM)
|
Toshiba Corporation
|
| IS61C6416AL-12TI-TR IS64C6416AL-15TLA3 IS65C6416AL |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
List of Unclassifed Manufac...
|
| T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| IC41C1664 IC41LV1664 IC41C1664-25K IC41C1664-25KI |
64K x 16 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| W26010A W26010AJ-15 W26010AJ-151 W26010AJ-20 W2601 |
64K 16 HIGH-SPEED CMOS STATIC RAM 64K6 HIGH-SPEED的CMOS静态RAM
64K 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
